Design and numerical analysis of CIGS-based solar cell with V₂O₅ as the BSF layer to enhance photovoltaic performance

Copper indium gallium selenide (CIGS)-based solar cells have exhibited greater performance than the ones utilizing cadmium telluride (CdTe) or hydrogenated amorphous silicon (a-Si: H) as absorber. CIGS-based devices are more efficient, considering their device performance, environmentally benign nature, and reduced cost. In this article, we proposed a potential CIGS-absorber-based cell with an FTO/ZnSe/CIGS/V 2 O 5 /Cu heterostructure, V back-surface field (BSF) layer, SnO :F (FTO) window ZnSe buffer layer. Using capacitance simulator one-dimensional simulation software, effects of presence BSF thickness, bulk defect density, acceptor density absorber layer interfacial resistance, operating temperature on open-circuit voltage, short-circuit current, fill factor, efficiency, well quantum efficiency recombination generation rate, been explored in detail. The results revealed that only 1 ?m-thick-CIGS layers structure offers outstanding 31.86% OC ?0.9 V. Thus, these outcomes heterostructure provide insightful pathway for fabricating high-efficiency promising previously reported conventional designs.